Surface and electronic structure of Ga0.92In0.08N thin film investigated by photoelectron spectroscopy

For a clean (0001)-(1×1) surface prepared by repeated cycles of Ar+ ion sputtering and annealing, electronic structure was investigated. The band structure was explored along the Γ-A direction of the Brillouin zone, measuring angle-resolved photoemission spectra along the surface normal. A similar set of data was also acquired for the same surface of GaN layer. Comparison of the collected data revealed an additional feature at the valence band edge, which can be ascribed to the presence of In in the layer.