کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10671008 | 1009031 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transport phenomena in high performance nanocrystalline ZnO:Ga films deposited by plasma-enhanced chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Transport phenomena in high performance nanocrystalline ZnO:Ga films deposited by plasma-enhanced chemical vapor deposition Transport phenomena in high performance nanocrystalline ZnO:Ga films deposited by plasma-enhanced chemical vapor deposition](/preview/png/10671008.png)
چکیده انگلیسی
Nanocrystalline gallium doped zinc oxide (ZnO:Ga) thin films were synthesized by plasma-enhanced chemical vapor deposition (PECVD). A statistical design of experiments (DOE) was employed to optimize electrical conductivity. A carrier concentration of 5.5Ã1020/cm3 and a mobility of 15 cm2/V s yielding a resistivity of 7.5Ã10â4 Ω cm resulted from the conditions of high pressure, rf power, and electrode gap. X-ray diffraction showed that gallium doping had a profound impact on film orientation. Atomic force microscopy (AFM) revealed that the films were nanostructured, with an average grain size of 80 nm and a surface roughness of â¼2 nm. This unique morphology benefited optical transmission, but limited electrical performance. Average transmission across the visible spectrum was â¼93% as scattering losses were minimized. Temperature dependent Hall and optical transmission measurements demonstrated that structural defects and ionized impurities were equal contributors to electron scattering.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 473, Issue 1, 1 February 2005, Pages 35-40
Journal: Thin Solid Films - Volume 473, Issue 1, 1 February 2005, Pages 35-40
نویسندگان
J.J. Robbins, J. Harvey, J. Leaf, C. Fry, C.A. Wolden,