Zinc-blende GaN quantum dots grown by vapor-liquid-solid condensation

Vapor-liquid-solid condensation was utilized to fabricate zinc-blende GaN quantum dots on 3C-AlN (0 0 1) in a molecular beam epitaxy system. By adjustment of deposition parameters and nitridation procedure the density of the quantum dots was controllable in the range of 5×108-5×1012 cm−2. The quantum dots in the range of 8×1010-5×1012 cm−2 have shown strong optical activity in photoluminescence spectroscopy. Furthermore we have demonstrated that vapor-liquid-solid condensation is suitable to tune the emission energy of zinc-blende GaN quantum dots in the range of 3.55-3.81 eV.