کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1663791 | 1008734 | 2016 | 6 صفحه PDF | دانلود رایگان |
• Incorporation of H/H2O stabilizes the amorphous phase.
• Ultrawide band gap (~ 3.8 eV) amorphous oxide semiconductor was fabricated.
• The increase in band gap comes mostly from the deepening of the valence band maximum level.
• Donor level is more likely aligned to the valence band maximum level.
We fabricated amorphous oxide semiconductor films, a-(Ga1–xZnx)Oy, at room temperature on glass, which have widely tunable band gaps (Eg) ranging from 3.47–4.12 eV. The highest electron Hall mobility ~ 7 cm2 V− 1 s− 1 was obtained for Eg = ~ 3.8 eV. Ultraviolet photoemission spectroscopy revealed that the increase in Eg with increasing the Ga content comes mostly from the deepening of the valence band maximum level while the conduction band minimum level remains almost unchanged. These characteristics are explained by their electronic structures. As these films can be fabricated at room temperature on plastic, this achievement extends the applications of flexible electronics to opto-electronic integrated circuits associated with deep ultraviolet region.
Journal: Thin Solid Films - Volume 614, Part B, 1 September 2016, Pages 84–89