کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1663991 | 1518000 | 2016 | 5 صفحه PDF | دانلود رایگان |
• Type II Si clathrate thin films are grown on Si wafers.
• The Si clathrate-Si wafer boundary is observed by transmission electron microscopy.
• A device prepared using the Si clathrate film shows photovoltaic response.
Thin films of guest-free type-II Si clathrate (Si136) were fabricated on Si(111) wafers in two steps: NaxSi136 thin-film formation by thermal decomposition of NaSi precursor films and Na removal from the NaxSi136 film by a heat treatment with iodine. Cross-sectional TEM observation and XRD and Raman measurements verified the formation of 1-μm-thick Si136 films on the Si wafer. Since the prepared films showed n-type conduction, pn junction devices were developed by a Si136/p-type Si structure. This device showed a photovoltaic (PV) response under white light illumination. The thin film formation and the PV response of Si136 indicated this Si allotrope to be the next-generation platform for semiconductor technology.
Journal: Thin Solid Films - Volume 609, 30 June 2016, Pages 30–34