Upconversion photoluminescence of epitaxial Yb3 +/Er3 + codoped ferroelectric Pb(Zr,Ti)O3 films on silicon substrates

• Epitaxial growth of Yb3 +/Er3 + codoped Pb(Zr,Ti)O3 films on SrTiO3 buffered silicon
• Upconversion emissions were obtained from the lanthanide ion doped thin films.
• Saturated ferroelectric hysteresis loops were observed.
• Polar domains were switched by PFM with a phase change of 180°.

Thin films of Yb3 +/Er3 + codoped Pb(Zr,Ti)O3 (PZT:Yb/Er) have been epitaxially grown on the SrTiO3 buffered Si wafer by pulsed laser deposition. Strong upconversion photoluminescence was observed in the PZT:Yb/Er thin film. Using piezoresponse force microscopy, polar domains in the PZT:Yb/Er film can be reversibly switched with a phase change of 180°. Ferroelectric hysteresis loop shape with a well-saturated response was observed. The epitaxially grown lanthanide-doped PZT on silicon opens up a promising route to the integration of luminescent functional oxides on the silicon platform.