کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1664053 1518001 2016 27 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
In-situ CdS/CdTe heterojuntions deposited by pulsed laser deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
In-situ CdS/CdTe heterojuntions deposited by pulsed laser deposition
چکیده انگلیسی
In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10− 8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm− 3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 608, 1 June 2016, Pages 1-7
نویسندگان
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