Influence of selenium amount on the structural and electronic properties of Cu(In,Ga)Se2 thin films and solar cells formed by the stacked elemental layer process

• Adjustment of the Ga/In distribution by the Se supply
• Enhanced Ga incorporation near-surface
• Interdiffusion coefficients of Ga/In are investigated.
• Shockley–Queisser modeling and 1D SCAPS simulations
• Fill factor is strongly coupled on the MoSe2/Mo ratio.

In the following article the influence of selenium supply on the stacked elemental layer process during the final annealing step is investigated. We find that the Se supply strongly influences the phase formation in the Cu(In,Ga)Se 2 resulting in a modified Ga/In distribution. The effects of Se supply on the structural and electronic properties of the films are reported. The solar cell performance has been investigated in detail using current voltage and external quantum efficiency measurements. We find that the chalcopyrite crystal formation is strongly influenced by the Se supply during the growth process. Furthermore the interdiffusion of Ga and In is accelerated with increasing Se amount. This has direct consequences on band gap and series resistance, which leads to changes in the values of short-circuit current density, open-circuit voltage and fill factor. The open-circuit voltage increases with increasing band gap of the Cu(In,Ga)Se 2, whereas the short-circuit current density decreases with increasing band gap. The fill factor is affected by the formation of MoSe 2 at the back contact. The experimental findings are compared with the theoretical efficiency limits calculated from the Shockley–Queisser model, and also with numerical 1D SCAPS simulations.