کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1664300 1518010 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Feasibility study on the use of Cu(Co) alloy for barrierless copper metallization
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Feasibility study on the use of Cu(Co) alloy for barrierless copper metallization
چکیده انگلیسی
In the present study, the properties of Cu(Co) alloy films were studied to evaluate their potential use as alloying elements for copper metallization. The Cu(Co) films were deposited on SiO2/Si substrates using magnetron sputtering technique. Cu(Co)/SiO2/Si structures were subsequently annealed in the temperature range of 300-600 °C to determine the diffusion barrier characteristics of the films. Thereafter samples were characterized using four-point probe measurements, X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron and transmission electron microscopy. It was found that the Cu(Co) films were preferentially orientated at (111) plane. No copper silicide was detected in the Cu(Co) films annealed up to 500 °C. A Co-containing thin layer was found at the Cu (Co)/SiO2 interface. In addition, well-defined interfaces were obtained for the sample annealed at 500 °C. There was no evidence of inter-diffusion between Cu and the substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 599, 29 January 2016, Pages 31-36
نویسندگان
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