Electron-beam induced surface relief shape inversion in amorphous Ge4As4Se92 thin films

• The effect of electron beam irradiation on the Ge4As4Se92 films has been studied.
• Depending on the electron dose, positive or negative structures can be created.
• The fabricated structures could be erased by red laser light.

The effects of electron beam interaction with Ge4As4Se92 amorphous film surface have been studied. The dependence of the surface relief shape on the irradiation dose has been analyzed. We find a threshold irradiation dose at which the surface relief shape inversion occurs, i.e. expansion at low irradiation doses and contraction at high doses. Possible mechanisms behind observed phenomena have been discussed. The application of these materials in a direct structure fabrication by electron lithography and single-stage information recording has been demonstrated.