کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1665366 | 1518041 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer](/preview/png/1665366.png)
چکیده انگلیسی
• Epitaxial growth of SrTiO3 on GaAs(001)
• Oxide molecular beam epitaxy
• Ti-based surface passivation
Epitaxial SrTiO3 (STO) layers were grown on GaAs(001) substrates by molecular beam epitaxy. A Ti-based surface passivation was used prior to STO growth. The different steps of this passivation procedure are discussed on the basis of reflection high energy electron diffraction experiments. We also show that the STO/GaAs template presents an excellent structural quality with a flat surface, an abrupt semiconductor/oxide interface, and a good crystallinity. Such STO/GaAs templates open perspectives for the integration of perovskite oxides on semiconductor substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 563, 31 July 2014, Pages 2–5
Journal: Thin Solid Films - Volume 563, 31 July 2014, Pages 2–5
نویسندگان
L. Louahadj, R. Bachelet, P. Regreny, L. Largeau, C. Dubourdieu, G. Saint-Girons,