کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1665985 1518060 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of microstructure of TiN film on properties as bipolar plate coatings in polymer electrolyte membrane fuel cell prepared by inductively coupled plasma assisted magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effect of microstructure of TiN film on properties as bipolar plate coatings in polymer electrolyte membrane fuel cell prepared by inductively coupled plasma assisted magnetron sputtering
چکیده انگلیسی


• Dense TiN and Ti0.9Si0.1N films are deposited by magnetron sputtering.
• Preferred growth orientation of TiN depends on the bias voltage and Si doping.
• TiN and Ti0.9Si0.1N films have excellent corrosion resistance.
• Surface conductivity of TiN and Ti0.9Si0.1N films evolves with bias voltage.

As potential application in bipolar plate of polymer electrolyte membrane fuel cell, the microstructure, corrosion resistance and the electrical conductivity of titanium nitride (TiN) and Si doped titanium nitride (Ti0.9Si0.1N) films deposited by magnetron sputtering with different bias voltages are investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), electrochemical test and four-point probe method, respectively. XRD, SEM and AFM results reveal that the texture and topography of TiN film depend on the bias voltage and incorporation of Si. When the bias voltage is − 20 V and − 30 V, the TiN and Ti0.9Si0.1N films exhibit a dense (111) plane preferred growth, denser structure and smoother surface topography. The potentiodynamic test results indicate that the TiN and Ti0.9Si0.1N films have higher chemical inertness and better corrosion resistance. The films can satisfy the requirement of current density for bipolar plate materials. Incorporation of Si element into TiN film makes the passive current density more stable. Four-point probe measurement results show that the resistivity of both TiN and Ti0.9Si0.1N films reaches minimum when the deposition bias voltage is − 20 V.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 544, 1 October 2013, Pages 224–229
نویسندگان
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