Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction

Submicron beam synchrotron-based X-ray diffraction (XRD) techniques have been developed and used to accurately and nondestructively map chemical composition and material quality of selectively grown group III-nitride nanowires. GaN, AlGaN, and InGaN multi-quantum-well nanowires have been selectively grown on lattice matched and mismatched substrates, and the challenges associated with obtaining and interpreting submicron beam XRD results are addressed and solved. Nanoscale cathodoluminescence is used to examine exciton behavior, and energy-dispersive X-ray spectroscopy is used to verify chemical composition. Scanning transmission electron microscopy is later used to paint a more complete picture. The advantages of submicron beam XRD over other techniques are discussed in the context of this challenging material system.

► We used nano selective area growth to create nanowires of GaN, AlGaN and InGaN/GaN.
► We characterized them by synchrotron-based submicron beam X-ray diffraction (XRD).
► This technique accurately determined chemical and crystallographic properties.
► Challenges of XRD are addressed in the context of this challenging material system.
► Advantages of XRD over other characterization methods are discussed.