کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1666107 1518063 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Strain characterization of FinFETs using Raman spectroscopy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Strain characterization of FinFETs using Raman spectroscopy
چکیده انگلیسی

Metal induced strain in the channel region of silicon (Si) fin-field effect transistor (FinFET) devices has been characterized using Raman spectroscopy. The strain originates from the difference in thermal expansion coefficient of Si and titanium-nitride. The Raman map of the device region is used to determine strain in the channel after preparing the device with the focused ion beam milling. Using the Raman peak shift relative to that of relaxed Si, compressive strain values up to – 0.88% have been obtained for a 5 nm wide silicon fin. The strain is found to increase with reducing fin width though it scales less than previously reported results from holographic interferometry. In addition, finite-element method (FEM) simulations have been utilized to analyze the amount of strain generated after thermal processing. It is shown that obtained FEM simulated strain values are in good agreement with the calculated strain values obtained from Raman spectroscopy.


► Strain is characterized in nanoscale devices with Raman spectroscopy.
► There is a fin width dependence of the originated strain.
► Strain levels obtained from this technique is in correlation with device simulations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 541, 31 August 2013, Pages 57–61
نویسندگان
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