کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1666114 | 1518063 | 2013 | 5 صفحه PDF | دانلود رایگان |
AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments.
► An active zone is proposed for a pseudomorphic laser structure on Si.
► Cladding layers are proposed for a pseudomorphic laser structure on Si.
► The AlGaP alloy is studied by X-ray diffraction and spectroscopic ellipsometry.
► InGaAs/GaP quantum dots are studied by scanning tunnelling microscopy.
► InGaAs/GaP quantum dots are studied by time-resolved photoluminescence.
Journal: Thin Solid Films - Volume 541, 31 August 2013, Pages 87–91