کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1666230 1518069 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical and electrical properties of SnSe2 and SnSe thin films prepared by spray pyrolysis
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Optical and electrical properties of SnSe2 and SnSe thin films prepared by spray pyrolysis
چکیده انگلیسی

Tin diselenide thin films were prepared by spray pyrolysis technique using SnCl2·H2O and 1,1-dimethyl-2-selenourea as precursor compounds with a Se:Sn atomic ratio of 1:1 in the starting solution. The deposition process was carried out in the substrate temperature range of 275 °C to 400 °C using two solution flow rates of 5 ml/min and 8 ml/min. The phases of SnSe2 were obtained when the deposition was carried ou at a flow rate of 5 ml/min, while for the films deposited at 8 ml/min mixed phases of SnSe2/SnSe were observed. Heat treatment of the deposited SnSe2/SnSe thin films in an atmosphere of 95% N2 and 5% H2 led to crystallization of the SnSe compound. The as deposited SnSe2 thin films have an optical band gap of 1.59 eV with n-type electrical conductivity in the range of 10− 1 (Ω cm)− 1 to 101 (Ω cm)− 1. The annealed thin films have an optical band gap of 0.81 eV and show p-type electrical conductivity of 2 × 10− 1 (Ω cm)− 1.


► SnSe and SnSe2 thin films were deposited by spray pyrolysis technique.
► Thin films of SnSe2 were deposited at a solution flow rate of 5 ml/min.
► At a flow rate of 8 ml/min, a mixture of SnSe2 and SnSe compounds was obtained.
► Films with good optoelectronic properties for photovoltaic applications were deposited.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 535, 15 May 2013, Pages 390–393
نویسندگان
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