کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1666267 | 1518070 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
N-type ZnO and Al-doped ZnO transparent conductive films prepared by an aqueous solution deposition technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: N-type ZnO and Al-doped ZnO transparent conductive films prepared by an aqueous solution deposition technique N-type ZnO and Al-doped ZnO transparent conductive films prepared by an aqueous solution deposition technique](/preview/png/1666267.png)
چکیده انگلیسی
We exploited an aqueous solution deposition technique to fabricate N-type ZnO and Al-doped ZnO (AZO) films with environmentally benign process at a very low temperature. ZnO, Zn, and Al were used in this study, instead of Zn(CH3COO)2, Al(NO3)3, and AlCl3 employed in previous investigations. Furthermore, the processing temperature was about 80 °C which was lower than those of other fabrication techniques. The experimental results demonstrated that the resistivity of pristine ZnO and AZO films without any post-growth thermal annealing can be as low as ~ 2.0 Ã 10â 2 Ω cm and ~ 8.4 Ã 10â 3 Ω cm, respectively, and the transmittances were approximately 90% and 85%, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 534, 1 May 2013, Pages 186-191
Journal: Thin Solid Films - Volume 534, 1 May 2013, Pages 186-191
نویسندگان
Yung-Hsin Tseng, Jau-Sheng Wang,