کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1666440 | 1518078 | 2012 | 9 صفحه PDF | دانلود رایگان |

In this paper we report the structural, optical and gas sensitivity behaviors of WO3 films implanted by 100 keV Ar+ ions. The films have been deposited on the unheated corning glass and n-type Si (100) substrates by thermal evaporation technique. The structural and vibrational properties of the pristine and implanted films have been thoroughly studied using X-ray diffraction patterns and Raman micrographs respectively. Optical transmittance and reflectance spectra of the films in the wavelength range 300 to 1000 nm have been measured. An increase in optical band gap from 2.90 to 3.49 eV has been observed with the increase in fluence from 3 × 1015 to 1 × 1017 cm− 2. It is also observed that implantation has caused enhancement in photoluminescence yield of the films. All films, especially the implanted films have shown good gas sensing behavior in methane environment. The film with a critical fluence of value 1 × 1016 cm− 2 shows better optical as well as gas sensing behaviors and hence can have good device applications.
► Crystalline phase of WO3 films changes after Ar+ ion implanted.
► Implantation has caused enhancement in photoluminescence as well as band gap.
► Implantation causes formation of defects and oxygen vacancies in the films.
► Film with fluence 1 × 1016 cm– 2 shows better optical and gas sensing behaviours.
Journal: Thin Solid Films - Volume 526, 30 December 2012, Pages 50–58