کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1666444 | 1518078 | 2012 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Formation of α-approximant and quasicrystalline Al–Cu–Fe thin films Formation of α-approximant and quasicrystalline Al–Cu–Fe thin films](/preview/png/1666444.png)
Multilayered Al/Cu/Fe thin films have been deposited by magnetron sputtering onto Si and Al2O3 substrates with a nominal global composition corresponding to the quasicrystalline phase, 5:2:1. Subsequent annealing was performed on the samples up to 710 °C. It is found that when using Si as a substrate a film-substrate reaction occurs already below 390 °C, where Si diffuses into the film. This changes the composition, promoting the formation of the α-approximant Al55Si7Cu25.5Fe12.5 in the temperature range 400 to 650 °C over the quasicrystalline ψ-phase. When annealing the same Al–Cu–Fe thin film grown on Al2O3 substrates the Al62.5Cu25Fe12.5 icosahedral quasicrystalline phase is formed.
► The α-approximant forms during annealing of Al/Cu/Fe thin film on a Si substrate.
► Diffusion of Si into the film occurs at temperatures below 390 °C.
► The Si diffusion prevents the formation of the icosahedral ψ-phase.
► If an Al2O3 substrate is used with the same film the icosahedral ψ-phase is formed.
Journal: Thin Solid Films - Volume 526, 30 December 2012, Pages 74–80