Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications

► HfO2 and ZrO2 thin films were grown on TiN using Atomic Layer Deposition process. ► We report an amorphous to crystalline transition with thickness and temperature. ► A bipolar switching occurs in HfO2 and ZrO2 based Resistive Random Access Memories. ► A modification of the interface between oxide and TiN is observed over cycling.