کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1666625 | 1518082 | 2012 | 5 صفحه PDF | دانلود رایگان |
The carrier concentrations and mobilities of impurity (Sb, In, Ga, Al, Ag, and Cu)-doped BaSi2 films grown by molecular beam epitaxy on highly resistive n- or p-Si(111) substrates were measured at room temperature using the van der Pauw technique. Sb-, Ga- and Cu-doped BaSi2 exhibited n-type conductivity, while In- Al- and Ag-doped BaSi2 exhibited p-type conductivity. The temperature dependence of resistivity indicated that the carrier transport in Ga-, Al-, Ag-, and Cu-doped BaSi2 is well explained by both Shklovskii–Efros-type and Mott-type variable range hopping conduction.
► Impurity-doped BaSi2 films were grown by molecular beam epitaxy.
► Sb-, Cu- and Ga-doped BaSi2 exhibited n-type conductivity.
► In-, Al-, and Ag-doped BaSi2 exhibited p-type conductivity.
► Hopping conduction occurs in Ga-, Al-, Cu-, and Ag-doped BaSi2.
Journal: Thin Solid Films - Volume 522, 1 November 2012, Pages 95–99