Distribution of pyrochlore phase in Pb(Mg1/3Nb2/3)O3-PbTiO3 films and suppression with a Pb(Zr0.52Ti0.48)O3 interfacial layer

Thin films of the relaxor ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) on Pt/Ti/SiO2/Si (Pt/Si) substrates both with and without a Pb(Zr0.52Ti0.48)O3 (PZT) interfacial layer were investigated. Perovskite and pyrochlore coexistence was observed for PMN-PT thin films without a PZT interfacial layer. Interestingly, most of the pyrochlore phase was observed in single-coated films and in the first layer of multi-coated films. The pyrochlore phase exhibited grains with an average size of about 25 nm, which is smaller than those of the perovskite phase (about 90 nm). In contrast, for PMN-PT thin films grown on a PZT interfacial layer, the formation of a pyrochlore phase at the interface between PMN-PT layers and the substrate is completely suppressed. Moreover, small grains are not observed in the films with a PZT interfacial layer. The measured polarization-electric field (P-E) hysteresis loops of PMN-PT films with and without PZT layers indicate that enhanced electrical properties can be obtained when a PZT interfacial layer is used. These enhanced properties include an increase in the value of remanent polarization Pr from 2.7 to 5.8 μC/cm2 and a decrease in the coercive field Ec from 60.5 to 28.0 kV/cm.

► Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) with a Pb(Zr0.52Ti0.48)O3 interfacial layer.
► Suppression of pyrochlore phases in PMN-PT films.
► Enhanced electrical properties of PMN-PT films.