Growth and surface characterization of magnetron sputtered zinc nitride thin films

Zinc nitride films were deposited on Si(100) substrates at room temperature using RF-magnetron sputtering in pure N2 and in Ar + N2 atmospheres. Two active phonon modes (270.81 and 569.80 cm− 1) are observed in Raman spectra for films deposited in Ar + N2 atmosphere. Atomic force microscopy showed that the average surface roughness of the films deposited in pure N2 atmosphere (1.3–3.33 nm) was less than for those deposited in a mixed Ar + N2 atmosphere (10.3–12.8 nm). Low temperature cathodoluminescence showed two emission bands centered at 2.05 eV and 3.32 eV for both types of films.

► Zn2N3 thin films were grown in pure N2 and in Ar–N2 mixture.
► Optical properties of Zn2N3 thin films were examined.
► Different preferred crystal orientations were observed for N2 and Ar + N2.
► Raman spectra show two active phonon modes for the Ar + N2 films.
► Low T cathodoluminescence shows two emission bands at 2.05 eV and 3.32 eV.