کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1666784 | 1518075 | 2013 | 4 صفحه PDF | دانلود رایگان |

CuInS2 films are promising for future solar cell technology. However, the formation of the CuS phase during the growth of CuInS2 thin films may hinder the performance of the CuInS2-based solar cell. Therefore, the removal of the excessive CuS phase is required during fabrication of CuInS2 films. In this research, we fabricated a CuInS2 film using Cu–In electrodeposition and a sulfurization process. Electrodeposition tests were conducted in solutions of various pH values and deposition voltages to grow high-quality precursor films. Moreover, to suppress formation of the CuS phases, heat treatment was incorporated in the fabrication process. We found that an appropriate amount of sulfur powder and a suitable heat treatment temperature could suppress the CuS phases and form well-crystallized CuInS2. Improvements in film quality and removal of the CuS phase can be confirmed by X-ray diffraction scanning electron microscope imaging, and energy dispersive spectrometer measurements. High-quality film with superior crystalline structure and surface morphology was formed with sulfurization and heat treatment at 600 °C.
► CuInS2 films were fabricated by Cu–In electrodeposition and sulfurization.
► Electrodeposition with various pH values and deposition voltages was conducted.
► Heat treatment was used to suppress formation of the CuS phase.
► An appropriate amount of sulfur powder was important to suppress the CuS phase.
Journal: Thin Solid Films - Volume 529, 1 February 2013, Pages 103–106