Nitrogen-doped graphene by microwave plasma chemical vapor deposition

Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films.

► Rapid synthesis of nitrogen doped few layer graphene on Cu foil.
► Defect density increment on 2% nitrogen doping.
► Nitrogen doped graphene is a good protection to the copper metallic surface.