کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1666964 | 1518083 | 2012 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Inductively coupled plasma reactive ion etching of IrMn magnetic thin films using a CH4/O2/Ar gas
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, the etch characteristics of IrMn magnetic thin films patterned with TiN hard mask were investigated using an inductively coupled plasma reactive ion etching in CH4/Ar and CH4/O2/Ar gas mixes. As the CH4 concentration increased in the CH4/Ar gas, the etch rates of IrMn and TiN films simultaneously decreased, while the etch selectivity increased and etch profiles improved without any redeposition. The addition of O2 to the CH4/Ar gas led to an increase in the etch selectivity and a higher degree of anisotropy in etch profile. The dc-bias voltage and gas pressure were varied to examine and optimize the etching process of IrMn films. Low gas pressure and high dc-bias voltage improved the etch profile, which displayed a high degree of anisotropy. Surface analysis of etched films by X-ray photoelectron spectroscopy was performed to identify the existence of compounds during etching.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 521, 30 October 2012, Pages 229-234
Journal: Thin Solid Films - Volume 521, 30 October 2012, Pages 229-234
نویسندگان
Tea Young Lee, Eun Ho Kim, Chee Won Chung,