X-ray photoelectron spectroscopy and conducting atomic force microscopy investigations on dual ion beam sputtered MgO ultrathin films

Ultrathin films of MgO (~ 6 nm) were deposited on Si(100) using dual ion beam sputtering in different partial pressures of oxygen. These thin films were characterized by X-ray photoelectron spectroscopy (XPS) for chemical state analysis and conducting atomic force microscopy for topography and local conductivity map. No trace of metal Mg was evidenced in these MgO films. The XPS analysis clearly brought out the formation of oxygen interstitials and Mg(OH)2 primarily due to the presence of residual water vapors in the chamber. An optimum value of oxygen partial pressure of ~ 4.4 × 10− 2 Pa is identified with regard to homogeneity of film and stoichiometry across the film thickness (O:Mg::0.93–0.97). The local conductivity mapping investigations also established the film homogeneity in respect of electrical resistivity. Non-linear local current–voltage curves revealed typical tunneling characteristics with barrier width of ~ 5.6 nm and barrier height of ~ 0.92 eV.

► Ultra-thin films (~ 6 nm) of MgO were deposited at different oxygen partial pressures.
► Chemical state of MgO thin films is investigated by X-ray photoelectron spectroscopy.
► Local conductivity map was investigated using conducting atomic force microscopy.
► Current–voltage characteristics at local points showed tunneling like behavior.