کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1667001 1008838 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Luminescence of Cr3 +-doped ZnGa2O4 thin films deposited by pulsed laser ablation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Luminescence of Cr3 +-doped ZnGa2O4 thin films deposited by pulsed laser ablation
چکیده انگلیسی

Chromium-doped zinc gallate powder is synthesized via a solid-state reaction and subsequently deposited as a thin film on quartz substrates by using a pulsed laser deposition technique under two different deposition conditions. The films are characterized with X-ray diffraction, scanning electron microscopy, UV–vis spectrophotometry and luminescent measurements. As the oxygen pressure is changed from 0 to 1 Pa, we find that the grain size gets smaller, the crystallinity improves, the band-gap energy increases, the excitation peaks of the charge transfer band exhibit a remarkable blue-shift from 263 to 247 nm and the intensity of the red emission (694 nm) is enhanced. The results suggest that the structural and luminescent properties of ZnGa2O4:Cr3 + thin film phosphors are improved by deposition at an oxygen pressure of 1 Pa.


► Cr3 +-doped ZnGa2O4 film is prepared by using a pulsed laser deposition technique.
► The crystallinity is improved as the oxygen pressure is changed from 0 to 1 Pa.
► The intensity of the red emission is enhanced with an oxygen pressure of 1 Pa.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 23, 30 September 2012, Pages 6845–6849
نویسندگان
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