کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1667061 1008841 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Epitaxial thin films of topological insulator Bi2Te3 with two-dimensional weak anti-localization effect grown by pulsed laser deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Epitaxial thin films of topological insulator Bi2Te3 with two-dimensional weak anti-localization effect grown by pulsed laser deposition
چکیده انگلیسی

We have grown high quality epitaxial topological insulator Bi2Te3 thin films on silicon (111) substrates by pulsed laser deposition. Systematic structural characterization of the films using X-ray diffraction and transmission electron microscopy has demonstrated that a low laser pulse rate is the key to achieving epitaxial films. The films show n-type metallic behavior, consistent with Te deficiency as determined by Rutherford backscattering spectrometry measurements. The A1g longitudinal optical phonon mode of Bi2Te3 was detected by time-resolved reflectivity measurements. A 2-dimensional (2-D) weak-antilocalization effect was also observed at low temperatures, which indicates the existence of topologically protected 2-D surface states in our thin films. This growth and characterization effort paves the way to fabricate multi-layer heterostructures of topological insulators along with ferromagnetic oxides and high temperature superconductors by the same growth technique in the search for physics arising from their interfacial couplings.


► Epitaxial thin films of topological insulator were grown by pulsed laser deposition.
► A low laser pulse rate is the key to achieving epitaxial films.
► The A1g optical phonon mode was detected by time-resolved reflectivity studies.
► A 2-D weak anti-localization effect arises from topological surface states.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 21, 31 August 2012, Pages 6459–6462
نویسندگان
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