کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667061 | 1008841 | 2012 | 4 صفحه PDF | دانلود رایگان |

We have grown high quality epitaxial topological insulator Bi2Te3 thin films on silicon (111) substrates by pulsed laser deposition. Systematic structural characterization of the films using X-ray diffraction and transmission electron microscopy has demonstrated that a low laser pulse rate is the key to achieving epitaxial films. The films show n-type metallic behavior, consistent with Te deficiency as determined by Rutherford backscattering spectrometry measurements. The A1g longitudinal optical phonon mode of Bi2Te3 was detected by time-resolved reflectivity measurements. A 2-dimensional (2-D) weak-antilocalization effect was also observed at low temperatures, which indicates the existence of topologically protected 2-D surface states in our thin films. This growth and characterization effort paves the way to fabricate multi-layer heterostructures of topological insulators along with ferromagnetic oxides and high temperature superconductors by the same growth technique in the search for physics arising from their interfacial couplings.
► Epitaxial thin films of topological insulator were grown by pulsed laser deposition.
► A low laser pulse rate is the key to achieving epitaxial films.
► The A1g optical phonon mode was detected by time-resolved reflectivity studies.
► A 2-D weak anti-localization effect arises from topological surface states.
Journal: Thin Solid Films - Volume 520, Issue 21, 31 August 2012, Pages 6459–6462