کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667118 | 1008843 | 2012 | 5 صفحه PDF | دانلود رایگان |

Transparent p-type conducting K-doped NiO thin films were prepared by pulsed plasma deposition. The structural, electrical and optical properties of the films were investigated using X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy, Hall measurement, and ultraviolet–visible spectroscopy, respectively. The dependency of film properties on K doping content and substrate temperature was studied. The film with K doping content of 25 at.% deposited at room temperature exhibits the highest conductivity of 4.25 S cm− 1 and an average transmittance of nearly 60% in visible light region.
► P-type K-doped NiO films were deposited by pulsed plasma deposition.
► The resistivity of the films is lowered with proper doping content.
► The film crystallinity is improved with the increase of substrate temperature.
► The film deposited at room temperature exhibits the conductivity of 4.25 S cm− 1.
Journal: Thin Solid Films - Volume 520, Issue 18, 1 July 2012, Pages 5884–5888