کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1667321 1008849 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation of LaRuO3 films by microwave plasma-enhanced chemical vapor deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Preparation of LaRuO3 films by microwave plasma-enhanced chemical vapor deposition
چکیده انگلیسی

LaRuO3 films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (RLa/Ru) and microwave power (PM) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At RLa/Ru < 1.0, RuO2 films were obtained independent of PM. At RLa/Ru = 1.6–3.2 and PM = 0.6–1.2 kW (deposition temperatures of 973–998 K), LaRuO3 single phase films were prepared. A product mixture of La2RuO5 and β-La3RuO7 was obtained at RLa/Ru = 4 and PM = 1.2 kW, while a mixture of RuO2 and La4.87Ru2O12 was formed at RLa/Ru = 4.6 and PM = 0.6 kW. LaRuO3 single phase films showed metallic conduction with a high electrical conductivity of 1.6 × 104 S m− 1 at room temperature.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 6, 1 January 2012, Pages 1847–1850
نویسندگان
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