کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1667365 1008849 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Patterning of porous silicon nanostructures and eliminating microcracks on silicon nitride mask using metal assisted chemical etching
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Patterning of porous silicon nanostructures and eliminating microcracks on silicon nitride mask using metal assisted chemical etching
چکیده انگلیسی

A method for selective formation of reproducible, high fidelity and controllable nano and micrometer size porous Si areas over n-type Si wafers is provided. A 400 nm thick Silicon Nitride layer was used as the mask layer while Platinum and Palladium nanoparticles were deposited over the unprotected areas to obtain porous areas through metal assisted chemical etching process. Nanoparticles were deposited by electroless plating solutions containing H2PtCl6 and PdCl2. Good controls over pore size and depth were obtained with well defined and sharp edges of the patterned areas. The results were compared to porous structures obtained via electrochemical etching process, indicating the superiority of metal assisted etching in terms of its simplicity as well as the ability of Silicon Nitride layer acting as the mask layer.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 6, 1 January 2012, Pages 2080–2084
نویسندگان
, , , , , ,