Plasma oxidation of electron beam evaporated cadmium thin films

Thin films of pure cadmium have been deposited using electron beam evaporation technique. Effect of radio frequency (RF) plasma oxidation on structural, optical and electrical properties of cadmium thin films has been investigated. It was found that the RF plasma treatment affects on the physical properties of the oxidized cadmium films. Transmittance values of 87% in the visible region and 90% in the near infrared region have been obtained for cadmium oxide (CdO) film oxidized at a plasma-processing power of 600 W. The optical energy gap, Eg, was found to increase as the RF plasma-processing power increases. The resistivity values of 3 × 10− 3 and 5 × 10− 3 (Ω cm) have been obtained for CdO films oxidized at RF plasma-processing powers of 550 and 600 W respectively.

► E-beam evaporation technique was used to prepare pure cadmium thin films.
► The pure cadmium films were oxidized at different plasma powers.
► Radio-frequency plasma treatment greatly influences the properties of CdO.
► Optical transmittance increased with increasing plasma processing power.
► Resistivity values of 3–5 × 10− 3 Ω cm were obtained at different plasma powers.