کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1667626 1008855 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Threshold voltage shift by controlling Ga in solution processed Si–In–Zn–O thin film transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Threshold voltage shift by controlling Ga in solution processed Si–In–Zn–O thin film transistors
چکیده انگلیسی

The threshold voltage change of solution processed gallium–silicon–indium–zinc oxide (GSIZO) thin film transistors (TFTs) annealed at 200 °C has been investigated depending on gallium ratio. GSIZO thin films were formed with various gallium ratios from 0.01 to 1 M ratio. The 30 nm-thick GSIZO film exhibited optimized electrical characteristics, such as field effect mobility (μFE) of 2.2 × 10− 2 cm2/V·s, subthreshold swing (S.S) of 0.11 V/dec, and on/off current ratio (Ion/off) of above 105. The variation of gallium metal cation has an effect on the threshold voltage (Vth) and the field effect mobility (μFE). The Vth was shifted toward positive direction from − 5.2 to − 0.4 V as increasing gallium ratio, and μFE was decreased from 2.2 × 10− 2 to 5 × 10− 3 cm2/V s. These results indicated that gallium was acted as carrier suppressor by degenerating oxygen vacancy. The electrical property of GSIZO TFTs has been analyzed as a function of the gallium ratio in SIZO system, and it clearly showed that variation of gallium contents could change on the performance of TFTs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 10, 1 March 2012, Pages 3774–3777
نویسندگان
, , ,