Deposition of zinc oxide thin films by an atmospheric pressure plasma jet

The ZnO thin film deposition process by using an atmospheric pressure (AP) plasma jet is studied. In this process, nebulized ZnCl2 solution is sprayed into the downstream of the nitrogen plasma jet to perform thin film deposition. X-ray diffraction analysis confirms that this AP jet has the capability to convert ZnCl2 solution to well-crystallized ZnO thin films with a hexagonal wurtzite structure in a short time. This film exhibits a smooth and mirror-like appearance visually. Scanning electron microscopy and atomic force microscopy show that the deposited film is dense and continuous with a root mean square surface roughness of 8.6 nm. A 1.29 nm/s deposition rate is obtained using this process. Given the fast deposition rate, we believe that both the temperature and the reactivity of the plasma play important roles. A ZnO film on a larger substrate is fabricated, which suggests the process capability in large area and continuous processing applications.