کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668079 | 1008862 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory](/preview/png/1668079.png)
چکیده انگلیسی
Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 °C, and separated well at 600 °C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 °C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 °C annealing. The electrical characteristics of data retention in the sample with the 600 °C annealing exhibited better performance than the 500 °C-annealed sample, a result associated with the better separation and better crystallization of the NC structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 3, 30 November 2011, Pages 1136-1140
Journal: Thin Solid Films - Volume 520, Issue 3, 30 November 2011, Pages 1136-1140
نویسندگان
Li-Wei Feng, Chun-Yen Chang, Ting-Chang Chang, Chun-Hao Tu, Pai-Syuan Wang, Chao-Cheng Lin, Min-Chen Chen, Hui-Chun Huang, Der-Shin Gan, New-Jin Ho, Shih-Ching Chen, Shih-Cheng Chen,