کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668080 | 1008862 | 2011 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: A study on the etch characteristics of HfAlO3 dielectric thin film in Cl2/Ar gas chemistry using inductively coupled plasma system A study on the etch characteristics of HfAlO3 dielectric thin film in Cl2/Ar gas chemistry using inductively coupled plasma system](/preview/png/1668080.png)
Thin films of HfAlO3, a high-k material, were etched using inductively-coupled plasma. The dry etching mechanism of the HfAlO3 thin film was studied by varying the Cl2/Ar gas mixing ratio, RF power, direct current bias voltage, and process pressure. The maximum etch rate of the HfAlO3 thin film was 16.9 nm/min at a C12/(C12 + Ar) ratio of 80%. Our results showed that the highest etch rate of the HfAlO3 thin films was achieved by reactive ion etching using Cl radicals, due to the high volatility of the metal-chlorides. Consequently, the increased chemical effect caused an increase in the etch rate of the HfAlO3 thin film. Surface analysis by x-ray photoelectron spectroscopy showed evidence that Hf, Al and O reacted with Cl and formed nonvolatile metal-oxide compounds and volatile metal-chlorides. This effect may be related to the concurrence of chemical and physical pathways in the ion-assisted chemical reaction.
Journal: Thin Solid Films - Volume 520, Issue 3, 30 November 2011, Pages 1141–1146