کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668093 1008863 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Evolution of etch profile in etching of CoFeB thin films using high density plasma reactive ion etching
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Evolution of etch profile in etching of CoFeB thin films using high density plasma reactive ion etching
چکیده انگلیسی

Inductively coupled plasma reactive ion etching of CoFeB magnetic thin films patterned with Ti hard mask was studied in a CH3OH/Ar gas mix. As the CH3OH concentration increased, the etch rates of CoFeB thin films and Ti hard mask decreased but the etch profiles improved with high degree of anisotropy. The effects of coil rf power, dc-bias voltage and gas pressure on the etch characteristics were investigated. The etch rate increased with increasing coil rf power, dc-bias voltage and decreasing gas pressure. The degree of anisotropy in the etch profile of CoFeB films improved with increasing coil rf power and dc-bias voltage. X-ray photoelectron spectroscopy revealed that the chemical compounds containing Co and Fe components were formed during the etching. However, it was expected that the formation of these compounds could not increase the etch rates of the films due to low volatile compounds despite the improvement in etch profile.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 20, 1 August 2011, Pages 6673–6677
نویسندگان
, , , ,