Effect of electron beam irradiation on the electrical and optical properties of ITO/Ag/ITO and IZO/Ag/IZO films

We have investigated the effect of electron beam irradiation as well as insertion of a Ag layer on the electrical and optical properties of the ITO or IZO films. The results show that electron beam irradiation as well as inserting a very thin Ag layer can significantly reduce sheet resistance of the ITO/Ag/ITO and IZO/Ag/IZO films. The electron beam irradiation also increases light transmittance and optical band gap of the ITO/Ag/ITO multilayer films; meanwhile, it has not influence on the transmittance of the IZO/Ag/IZO films. These results can be explained by that In and Zn cation in IZO film have strong tendency to preserve their coordination with oxygen.