کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668164 | 1008863 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modeling of high frequency atmospheric pressure Ar/H2/SiH4 glow discharges
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, a one-dimensional self-consistent fluid model is applied to simulate high frequency atmospheric pressure glow discharges. The results show that the plasma density and current density depend strongly on the excitation frequency. When the excitation frequency is below 13.56 MHz, the discharge operates in the α mode, and when the excitation frequency is above 13.56 MHz, the discharge operates in a γ-like mode. The densities of species including SiH3+, SiH3â, SiH3, SiH2, H, Ar+, Arâ and electron are enhanced with the frequency increasing from 6.78 to 27.12 MHz. Similar discharge mode transition was observed experimentally in radio frequency atmospheric pressure He glow discharges. The effects of excitation frequency on plasma characteristics and densities of precursors for μc-Si:H film are further discussed. This study reveals that an appropriate excitation frequency is important for the growth of μc-Si:H film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 20, 1 August 2011, Pages 7014-7019
Journal: Thin Solid Films - Volume 519, Issue 20, 1 August 2011, Pages 7014-7019
نویسندگان
Juan Zhuang, Jizhong Sun, Dezhen Wang, Chaofeng Sang, Liying Liu,