کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668341 1008867 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of annealing treatment on structural, electrical, and optical properties of Ga-doped ZnO thin films deposited by RF magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effect of annealing treatment on structural, electrical, and optical properties of Ga-doped ZnO thin films deposited by RF magnetron sputtering
چکیده انگلیسی

The effect of annealing on structural, electrical, and optical properties of Ga-doped ZnO (GZO) films prepared by RF magnetron sputtering was investigated in air and nitrogen. GZO films are polycrystalline with a preferred 002 orientation. The resistivities of annealed films are larger than the as-deposited. The transmittance in the near IR region increases greatly and the optical band gap decreases after annealing. The photoluminescence spectra is composed of a near band edge emission and several deep level emissions (DLE) which are dominated by a blue emission. After annealing, these DLEs are enhanced evidently.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 2, 1 November 2011, Pages 703–707
نویسندگان
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