Stress and microstructure evolution in Al-induced crystallization of amorphous Ge thin films

Stress evolution during Al-induced crystallization of amorphous Ge thin films was in-situ explored by multi-beam optical stress sensor (MOSS). The critical temperature at which crystallization occurs was determined by in-situ X-ray diffraction (XRD) measurement. In combination with microstructure characterization, we try to understand the mechanisms of stress generation as well as stress relaxation during metal induced crystallization (MIC).