Compositional optimization of magnetite thin films prepared by rf sputtering from a composite target of wüstite and Ge

This study investigated the compositional optimization of magnetite (Fe3O4) thin films containing a small amount of Ge to enhance magnetization. No substrate bias was applied during deposition. In a pure Ar atmosphere, the film structure changed from the phase mixture of magnetite and wüstite (Fe1 − xO) to the weak appearance of wüstite with increasing Ge content. The antiferromagnetic wüstite thus obtained was employed as a starting material to prepare single-phase magnetite, and a gas mixture of Ar and O2 was then applied. Single-phase magnetite thin films exhibit ferrimagnetic behavior with maximum magnetization of 0.42 T at 1196 kA m−1(15 kOe), which exceeds that of a composite target of ceramic magnetite with Ge chips. Simultaneously adding Ge to the iron-excess wüstite target therefore effectively enhanced magnetization.