کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668452 1008869 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Polarized GaN-based light-emitting diode with an embedded metallic/dielectric subwavelength grating
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Polarized GaN-based light-emitting diode with an embedded metallic/dielectric subwavelength grating
چکیده انگلیسی

Highly polarized light from an InGaN/GaN light emitting diode is proposed using an embedded multi-layer metallic/dielectric sub-wavelength grating and a dielectric transition layer. Transmission of transverse magnetic mode (TTM), reflection of transverse electric mode, and polarization extinction ratio (ER) were calculated using commercial “GSOLVER” software, based on a full vector implementation of Rigorous Coupled-Wave Analysis algorithm. TTM and ER were found to be largely enhanced by the presence of the transition layer, made of MgF2 or SiO2, placed between GaN and the grating section. TTM > 95% and ER > 34 dB for closely optimized Al/MgF2 gratings were predicted. These values are significantly higher than those obtained by single-layer metallic gratings.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 1, 31 October 2011, Pages 419–423
نویسندگان
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