کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668473 | 1008869 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature-dependent magnetoresistance of ZnO thin film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Temperature-dependent magnetoresistance of ZnO thin film Temperature-dependent magnetoresistance of ZnO thin film](/preview/png/1668473.png)
چکیده انگلیسی
A ZnO film was deposited, and the magnetic and the magnetoresistive (MR) properties were studied. The MR measurements reveal negative MR at 80, 50, 20, 10 and 6 K, which is supposed to be induced by the weak-localization effect, based on a logarithmic dependence of the electrical conductivity on temperature. When temperature was reduced to be 2 K, a positive MR was observed. We suggest that it is related to the spin splitting induced by exchange interaction between itinerant electrons and vacancy defects in ZnO. Through the magnetic measurement, it is found that ZnO shows ferromagnetism. It is suggested that the observed ferromagnetism is correlated with the exchange interaction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 1, 31 October 2011, Pages 529–532
Journal: Thin Solid Films - Volume 520, Issue 1, 31 October 2011, Pages 529–532
نویسندگان
D.F. Wang, Y. Ying, V.T.T. Thuy, J.M. Kim, M.S. Seo, F. Gao, T.J. Zhang, K.W. Kim, Y.P. Lee,