کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668581 | 1008871 | 2011 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Optical characterization of HfO2 thin films Optical characterization of HfO2 thin films](/preview/png/1668581.png)
Hafnia films prepared onto silicon wafers at three substrate temperatures of 40, 160 and 280 °C are optically characterized utilizing the multi-sample method. The characterization uses the combination of variable angle spectroscopic ellipsometry and spectroscopic reflectometry within the spectral region 1.24–6.5 eV (190–1000 nm). The structural model of the HfO2 films includes boundary nanometric roughness, thickness non-uniformity and refractive index profile. Spectral dependences of the film optical constants are expressed using a recently developed parametrized joint density of states model describing the dielectric response of both interband transitions and excitations of localized states below the band gap. It is shown that the observed weak absorption below the band gap does not correspond to the Urbach tail.
Journal: Thin Solid Films - Volume 519, Issue 18, 1 July 2011, Pages 6085–6091