کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668587 1008871 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical, electrical and structural properties of Cu2Te thin films deposited by magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Optical, electrical and structural properties of Cu2Te thin films deposited by magnetron sputtering
چکیده انگلیسی

Thin films of Cu2Te were deposited, at room temperature, on glass substrates by magnetron sputtering from independent Cu and Te sources. This work presents the effect of annealing temperature on the optical, structural, and electrical properties of sputtered Cu2Te films. Annealing above 300 °C resulted in stoichiometric and near stoichiometric Cu2Te phases, whereas temperatures above 400 °C yielded films with single Cu2Te phase. In contrast, annealing at temperatures of 250 °C and below resulted in mixed phases of CuTe, Cu7Te5, Cu1.8Te, and Cu2Te. Analyses of transmittance and reflectance measurements for Cu2Te indicate that photon absorption occurs via indirect band transitions for incident photons with energy above the band gap energy and free carrier absorption below the band gap energy. The determined indirect band gap was 0.90 eV and its associated phonon energy was 0.065 eV. Optical phonon scattering was identified as the mechanism through which the momentum is conserved during absorption by free carriers. Electrical measurements show p-type conductivity and highly degenerate semiconducting behavior with a hole carrier concentration p = 5.18 × 1021 cm− 3.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 18, 1 July 2011, Pages 6115–6119
نویسندگان
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