کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668612 | 1008872 | 2011 | 6 صفحه PDF | دانلود رایگان |

Antimony telluride (Sb2Te3) is a chalcogenide material used in thermoelectric applications. The deposition of thin films of Sb2Te3 requires a precisely controlled process to achieve a desirable high thermoelectric figure-of-merit. The optimization of the thermal co-evaporation process for p-type Sb2Te3 thin-film onto plastic substrates (Kapton© polyimide) for thermoelectric applications is reported. The influence of deposition parameters and composition on thermoelectric properties was studied, seeking optimal thermoelectric performance. Energy-dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectroscopy all confirmed the formation of Sb2Te3 thin films. Seebeck coefficient (up to 190 μVK−1), in-plane electrical resistivity (8–15 μΩm), carrier concentration (1 × 1019–7 × 1019 cm−3) and Hall mobility (120–180 cm2V−1s−1) were measured at room temperature for the best Sb2Te3 thin-films.
Journal: Thin Solid Films - Volume 519, Issue 13, 29 April 2011, Pages 4152–4157