Microwave-crystallization of amorphous silicon film using carbon-overcoat as susceptor

Crystallization of amorphous silicon (a-Si:H) film is extremely important in many aspects of electronic devices and has been heavily explored. We demonstrate that microwave irradiation, 200 W, is able to fast-crystallize a-Si:H film using as susceptor carbon-overcoat which contains graphite and carbon nano-tube. X-ray diffraction and Raman spectra reveal that nearly full crystallization is reached within 90 s. Microwave absorption by the carbon-overcoat generates thermal energy which heats up a-Si:H film to a threshold temperature 440 ± 10 °C required for initiation of microwave crystallization. Dielectric properties of a-Si:H film facilitate its self-heating and nucleation of Si crystallites at above the threshold temperature. This method is extendable to fast-crystallize a-Si:H film on a remote and large-area basis.