کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668650 1008872 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural properties of low-temperature grown ZnO thin films determined by X-ray diffraction and X-ray absorption spectroscopy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Structural properties of low-temperature grown ZnO thin films determined by X-ray diffraction and X-ray absorption spectroscopy
چکیده انگلیسی

The epitaxial growth of ZnO thin films on Al2O3 (0001) substrates have been achieved at a low-substrate temperature of 150 °C using a dc reactive sputtering technique. The structures and crystallographic orientations of ZnO films varying thicknesses on sapphire (0001) were investigated using X-ray diffraction (XRD). We used angle-dependent X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectroscopy to examine the variation of local structure. The XRD data showed that the crystallinity of the film is improved as the film thickness increases and the strain is fully released as the film thickness reached about 800 Å. The Zn K-edge XANES spectra of the ZnO films have a strong angle-dependent spectral feature resulting from the preferred c-axis orientation. The wurtzite structure of the ZnO films was explicitly shown by the XRD and EXAFS analysis. The carrier concentration, Hall mobility and resistivity of the 800 Å-thick ZnO film were 1.84 × 1019 cm− 3, 24.62 cm2V− 1s− 1, and 1.38 × 10− 2 Ω cm, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 13, 29 April 2011, Pages 4366–4370
نویسندگان
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